NTMFS4D2N10MDT1G-HXY
Transistors (BJT/MOSFET)
Type: N-Channel
Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 120A
Pd - Power Dissipation: 176W
Gate Threshold Voltage (Vgs(th)): 3V
RDS(on): 3.6mΩ@10V
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 120 A |
| Chan Type | N-Channel |
| Pd W | 176 W |
| Output Capacitance(Coss) | 592pF |
| Configuration | Standalone |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 19.8pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.102nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 3.6mOhm@10V |
| Gate Charge C | 69nC@10V |
| Type | N-Channel |
| Package / Case | DFN-8L(5x6) |
Product Introduction
The NTMFS4D2N10MDT1G employs advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.
Features
- Drain-source voltage VDS = 100 V, drain current ID = 120 A
- On-resistance RDS(ON) < 4.4 mΩ at gate-source voltage VGS = 10 V
Applications
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
Datasheet
Alternative Parts
Common NTMFS4D2N10MDT1G-HXY alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| Type | Details |
|---|---|
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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