Infineon Technologies

BSC360N15NS3 G

Transistors (BJT/MOSFET)

MPN
BSC360N15NS3 G
Package / Case
TDSON-8(5x6)
Key Attributes
MOSFET N-CH 150V TDSON-8(5x6)

Technical Specifications

TypeDescription
Drain-Source Voltage150 V
Continuous Drain Current33 A
Chan TypeN-Channel
Pd W74 W
Gate Charge C12 nC
Output Capacitance(Coss)106pF
Configuration-
Gate Threshold Voltage (Vgs(th))3V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)893pF
Vgs±20V
Operating Temperature-55°C~+175°C
Rds On Ohm31mOhm@10V
TypeN-Channel
Package / CaseTDSON-8(5x6)

Features

  • N-channel, normally-on
  • Excellent gate charge × RDS(on) product (Figure of Merit)
  • Ultra-low on-resistance RDS(on)
  • Operating temperature up to 150°C
  • Lead-free lead finish; RoHS compliant
  • Qualified per JEDEC standards for target applications
  • Suitable for high-frequency switching and synchronous rectification
  • Halogen-free per IEC61249-2-21

Datasheet

📄 Open Download

Alternative Parts

Common BSC360N15NS3 G alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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