Vishay Intertechnology

SIR610DP-T1-RE3

Transistors (BJT/MOSFET)

MPN
SIR610DP-T1-RE3
Package / Case
PowerPAK-SO-8
Key Attributes
Number: 1 N-channel
Type: N-Channel
Drain to Source Voltage: 200V
Current - Continuous Drain(Id): 35.4A
Pd - Power Dissipation: 66.6W
Gate Threshold Voltage (Vgs(th)): 4V
RDS(on): 31.9mΩ@10V

Technical Specifications

TypeDescription
Drain-Source Voltage200 V
Continuous Drain Current35.4 A
Chan TypeN-Channel
Pd W66.6 W
Gate Charge C20 nC
Output Capacitance(Coss)142pF
Configuration-
Gate Threshold Voltage (Vgs(th))4V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)1.38nF
Vgs±20V
Operating Temperature-55°C~+150°C
Rds On Ohm31.9mOhm@10V
TypeN-Channel
Package / CasePowerPAK-SO-8

Features

  • ThunderFET technology optimizes the balance of RDS(on), Qg, Qsw, and Qoss
  • 100% Rg and UIS tested
  • RoHS compliant
  • Halogen-free

Applications

  • Fixed Telecommunications
  • DC/DC Converters
  • Primary and Secondary Side Switching
  • Synchronous Rectification
  • LED Lighting
  • Power Supplies
  • Class D Amplifiers

Datasheet

📄 Open Download

Alternative Parts

Common SIR610DP-T1-RE3 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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