2N7002ET1G
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 310 mA |
| Chan Type | N-Channel |
| Pd W | 0.3 W |
| Output Capacitance(Coss) | 4.6pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.9pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 40pF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 3Ohm@4.5V |
| Gate Charge C | 810pC@10V |
| Type | N-Channel |
| Package / Case | SOT-23 |
Product Introduction
This FDmesh™ II power MOSFET features an intrinsic fast recovery body diode and is manufactured using second-generation MDmesh™ technology. This innovative device adopts a new strip layout vertical structure, delivering extremely low on-resistance and outstanding switching performance, making it ideally suited for bridge topologies and zero voltage switching (ZVS) phase-shifted converters.
Features
- Low RDS(on)
- Small Footprint Surface Mount Package
- Trench Technology
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
- Low Side Load Switch
- Level Shift Circuits
- DC−DC Converter
- Portable Applications i.e. DSC, PDA, Cell Phone, etc.
Datasheet
Alternative Parts
Common 2N7002ET1G alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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