2N7002,215
Single FETs, MOSFETs
Manufacturer
MPN
2N7002,215
Product Type
Package / Case
SOT-23
Datasheet
Key Attributes
MOSFET N-CH 60V 300mA SOT-23
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 0.3 A |
| Chan Type | N-Channel |
| Pd W | 0.83 W |
| Rds On Ohm | 5 Ω |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 50pF |
| Vgs | +/-30V |
| Output Cap Coss | 6.799999999999999e-12 |
| Operating Temp | -65°C ~ +150°C |
| Gate Charge C | - |
| Type | N-Channel |
| Package / Case | SOT-23 |
Product Introduction
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.
Features
- Logic-level gate drive compatible
- Surface mount package
- Ultra-fast switching speed
- Trench MOSFET technology
Applications
- - Logic level translator - High-speed line driver
Datasheet
Alternative Parts
Common 2N7002,215 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Looking for a reliable source for 2N7002,215 from Nexperia? SZ Procure is a China electronics sourcing partner, helping international buyers source components through our supplier network in Shenzhen.
Our Shenzhen sourcing team can help with supplier sourcing, availability checks and quotation comparison for 2N7002,215, then coordinate procurement, supplier screening, inspection and international shipping based on what you need.
Looking to source 2N7002,215? Submit an RFQ and let our Shenzhen sourcing team check available supplier options for you.