25LC1024T-I/SM
Memory
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 20 MHz |
| Memory Size | 1Mbit |
| Access Time | 25ns;50ns |
| Data Retention - TDR (Year) | 200 Years |
| Write Cycle Time(tWC) | 6ms |
| Standby Supply Current | 20uA |
| Type | Description |
|---|---|
| Write Cycle Endurance | 1,000,000 cycles |
| Operating Temp | -40°C ~ +85°C |
| Features | Hardware write protection function;Built-in power-on reset (POR);Built-in write enable latch (WEL);Power-down/Power-up protection circuit |
| Working Voltage V | 4 V |
| Interface | SPI |
| Package / Case | SOIJ-8-5.28mm |
Product Introduction
The 25LC1024 is a 1024 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input.
Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.
The 25LC1024 is available in standard packages including 8-lead PDIP and SOIJ, and advanced 8-lead DFN package. All devices are Pb-free.
Features
- 20 MHz max. Clock Speed
- Byte and Page-level Write Operations:
- 256 byte page
- 6 ms max. write cycle time
- No page or sector erase required
- Low-Power CMOS Technology:
- Max. Write current: 5 mA at 5.5V, 20 MHz
- Read current: 7 mA at 5.5V, 20 MHz
- Standby current: 1 μA at 2.5V (Deep power-down)
- Electronic Signature for Device ID
- Self-Timed Erase and Write Cycles:
- Page Erase (6 ms max.)
- Sector Erase (10 ms max.)
- Chip Erase (10 ms max.)
- Sector Write Protection (32K byte/sector):
- Protect none, 1/4, 1/2 or all of array
- Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
- High Reliability:
- Endurance: 1M erase/write cycles
- Data Retention: > 200 years
- ESD Protection: > 4000V
- Temperature Ranges Supported:
- Industrial (I): -40℃ to +85℃
- Automotive (E): -40℃ to +125℃
- Pb-Free and RoHS Compliant
Datasheet
Alternative Parts
Common 25LC1024T-I/SM alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
Need 25LC1024T-I/SM from Microchip Technology for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.
When you need 25LC1024T-I/SM, SZ Procure can look into supplier options, confirm current availability, compare sourcing quotes and handle purchasing, pre-shipment inspection and consolidated shipment from Shenzhen. Before ordering, the listed specification(s) — Memory Size 1Mbit — can be confirmed with the supplier against the actual part.
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