25LC1024-I/SM
Memory
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 20 MHz |
| Memory Size | 1Mbit |
| Access Time | - |
| Data Retention - TDR (Year) | 200 Years |
| Write Cycle Time(tWC) | 6ms |
| Standby Supply Current | 20uA |
| Type | Description |
|---|---|
| Write Cycle Endurance | 1,000,000 cycles |
| Operating Temp | -40°C ~ +85°C |
| Features | Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit |
| Working Voltage V | 4 V |
| Interface | SPI |
| Package / Case | SOIJ-8-5.28mm |
Product Introduction
The 25LC1024 is a 1024 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input.
Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.
The 25LC1024 is available in standard packages including 8-lead PDIP and SOIJ, and advanced 8-lead DFN package. All devices are Pb-free.
Features
- 20 MHz max. Clock Speed
- Byte and Page-level Write Operations:
- 256 byte page
- 6 ms max. write cycle time
- No page or sector erase required
- Low-Power CMOS Technology:
- Max. Write current: 5 mA at 5.5V, 20 MHz
- Read current: 7 mA at 5.5V, 20 MHz
- Standby current: 1 μA at 2.5V (Deep power-down)
- Electronic Signature for Device ID
- Self-Timed Erase and Write Cycles:
- Page Erase (6 ms max.)
- Sector Erase (10 ms max.)
- Chip Erase (10 ms max.)
- Sector Write Protection (32K byte/sector):
- Protect none, 1/4, 1/2 or all of array
- Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
- High Reliability:
- Endurance: 1M erase/write cycles
- Data Retention: > 200 years
- ESD Protection: > 4000 V
- Temperature Ranges Supported:
- Industrial (I): -40℃ to +85℃
- Automotive (E): -40℃ to +125℃
- Pb-Free and RoHS Compliant
Datasheet
Alternative Parts
Common 25LC1024-I/SM alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
Sourcing 25LC1024-I/SM from China? SZ Procure helps international buyers navigate the Shenzhen electronics market and locate suitable supplier options for specific component requirements.
For 25LC1024-I/SM, we can check current supplier availability, compare quotations from multiple sources, coordinate purchasing, and arrange pre-shipment inspection and shipment consolidation according to your requirements.
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