WST3400S
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 30 V |
| Continuous Drain Current | 5.6 A |
| Chan Type | N-Channel |
| Pd W | 1 W |
| Output Capacitance(Coss) | 112pF |
| Ciss-Input Capacitance | 600pF |
| Configuration | - |
| Reverse Transfer Capacitance (Crss) | 91pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Vgs | ±12V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 45mOhm@2.5V |
| Gate Charge C | 8.4nC@4.5V |
| Type | N-Channel |
| Package / Case | SOT-23 |
Product Introduction
The WST3400S is the highest performance trench N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST3400S meet the RoHS and Green Product requirement with full function reliability approved.
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- GreenDevice Available
Applications
- High Frequency Point-of-Load Synchronous
- Small power switching for MB/NB/UMPC/VGA
- Networking DC-DC Power System
- LoadSwitch
Datasheet
Alternative Parts
Common WST3400S alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Sourcing WST3400S from China? SZ Procure helps international buyers navigate the Shenzhen electronics market and locate suitable supplier options for specific component requirements.
For WST3400S, we can check current supplier availability, compare quotations from multiple sources, coordinate purchasing, and arrange pre-shipment inspection and shipment consolidation according to your requirements.
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