WSR20N20
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 20 A |
| Chan Type | N-Channel |
| Pd W | 104 W |
| Output Capacitance(Coss) | 180pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.318nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 150mOhm@10V |
| Gate Charge C | 41nC@10V |
| Type | N-Channel |
| Package / Case | TO-220 |
Product Introduction
The WSR20N20 is the highest performance trench N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The WSR20N20 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Green Device Available
Applications
- High Frequency Point-of-Load Synchronous Buck Converter
- Networking DC-DC Power System
- Load Switch
Datasheet
Alternative Parts
Common WSR20N20 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Need WSR20N20 from Winsok Semicon for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.
Our Shenzhen sourcing team can help with supplier sourcing, availability checks and quotation comparison for WSR20N20, then coordinate procurement, supplier screening, inspection and international shipping based on what you need.
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