Winbond Electronics

W664GG6RB-06

Memory

Manufacturer
MPN
W664GG6RB-06
Product Type
Maximum Clock Speed
1.6 GHz
Package / Case
VFBGA-96

Technical Specifications

TypeDescription
Maximum Clock Speed1.6 GHz
Refresh Current2mA
Memory Size4Gbit
Memory FormatDDR4 SDRAM
TypeDescription
Operating Temp0°C ~ +95°C
FeaturesAuto self-refresh;Built-in temperature sensor;Auto precharge function;Asynchronous reset function;Data mask function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;CRC function
Working Voltage V1.2 V
Package / CaseVFBGA-96

Product Introduction

This product is a DDR4 SDRAM memory device in x16 configuration with a 96-ball VFBGA package. It supports high-speed data transfer and incorporates a wide range of advanced features to optimize system performance and reliability. The device includes a simplified state machine, fundamental read/write operation capabilities, and defines detailed reset and initialization procedures. Its operating modes are configurable via mode registers. Core features include burst length and order control, DLL enable/disable sequences, input clock frequency change adaptation, write leveling adjustment, and multiple temperature-controlled refresh modes. Additionally, it supports fine granularity refresh, multipurpose registers for DQ training, data mask, data bus inversion, ZQ calibration, DQ reference voltage training, per-DRAM addressability, command/address latency mode, CRC, command/address parity, gear-down mode, and programmable preamble and postamble. The device adheres to standard timing definitions for activate, precharge, and read operations.

Features

  • Compliant with DDR4 SDRAM standard
  • x16 data width, 96-ball VFBGA package
  • Programmable burst length and burst order
  • Integrated DLL with switchable modes for different operating conditions
  • Input clock frequency variation support
  • Write leveling for signal integrity optimization
  • Multiple temperature-controlled refresh modes: normal temperature mode (-40℃ ≤ TCASE ≤ 85℃) and extended temperature mode (85℃ ≤ TCASE ≤ 105℃)
  • Fine granularity refresh mode with adjustable refresh rate
  • Multi-purpose registers for DQ training
  • Data mask and data bus inversion (DBI) support
  • ZQ calibration command for output drive and termination resistance optimization
  • DQ reference voltage training
  • Per-DRAM addressability
  • Command address latency mode
  • Integrated CRC for data integrity checking
  • Command address parity with error log readback
  • Gear-down mode
  • Programmable write and read preamble
  • Programmable write and read postamble
  • Standard activate, precharge, and read operation timing compliance

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8542329000
USHTS8542320071
TARIC8542329000
TypeDetails
CAHTS8542330000
BRHTS85423299
INHTS85423200
MXHTS8542.32.99

Sourcing Information

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