Winbond Electronics

W25Q80EWSSIG TR

Memory

Manufacturer
MPN
W25Q80EWSSIG TR
Product Type
Maximum Clock Speed
104 MHz
Package / Case
SOIC-8-208mil

Technical Specifications

TypeDescription
Maximum Clock Speed104 MHz
Memory Size8Mbit
Program / Erase Cycles100,000 cycles
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)180ms@(64KB)
Write Cycle Time(tWC)-
Page Programming Time (Tpp)400us
TypeDescription
Standby Supply Current10uA
Operating Temp-40°C ~ +85°C
Features-
Working Voltage V1.8 V
InterfaceSPI
Package / CaseSOIC-8-208mil

Product Introduction

The W25Q80EW (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 1.65V to 1.95V power supply with current consumption as low as 1mA active and 1μA for power-down. All devices are offered in space-saving packages.

The W25Q80EW array is organized into 4,096 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q80EW has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage.

The W25Q80EW supports the standard Serial Peripheral Interface (SPI), and a high performance Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock.

Datasheet

📄 Open Download

Alternative Parts

Common W25Q80EWSSIG TR alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8542329000
USHTS8542320071
TARIC8542329000
TypeDetails
CAHTS8542330000
BRHTS85423299
INHTS85423200
MXHTS8542.32.99

Sourcing Information

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