W25Q16JVUXIQ
Memory
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 133 MHz |
| Memory Size | 16Mbit |
| Program / Erase Cycles | 100,000 cycles |
| Data Retention - TDR (Year) | 20 Years |
| Block Erase Time(tBE) | - |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 3ms |
| Type | Description |
|---|---|
| Standby Supply Current | 10uA |
| Operating Temp | -40°C ~ +85°C |
| Features | - |
| Working Voltage V | 3.15 V |
| Interface | SPI |
| Package / Case | USON-8-EP |
Product Introduction
The W25Q16JV (16M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current consumption as low as 1μA for power-down.
The W25Q16JV array is organized into 8,192 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q16JV has 512 erasable sectors and 32 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require
Datasheet
Alternative Parts
Common W25Q16JVUXIQ alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
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