VBsemi Elec

VB162K

Transistors (BJT/MOSFET)

Manufacturer
VBsemi ElecAsian Brands
MPN
VB162K
Package / Case
SOT-23(TO-236)
Key Attributes
MOSFET N-CH 60V 250mA SOT-23(TO-236)

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current250 mA
Chan TypeN-Channel
Pd W0.3 W
Output Capacitance(Coss)5pF
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)2pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)25pF
Operating Temperature-55°C~+150°C
Rds On Ohm2.8Ohm@10V
Gate Charge C400pC@4.5V
TypeN-Channel
Package / CaseSOT-23(TO-236)

Features

  • Compliant with halogen-free requirements as defined by IEC 61249-2-21
  • Low threshold: 2 V (typical)
  • Low input capacitance: 25 pF
  • Fast switching speed: 25 ns
  • Low input and output leakage current
  • Trench power MOSFET
  • Compliant with RoHS Directive 2002/95/EC

Applications

  • Direct logic level interface: TTL/CMOS
  • Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
  • Battery-powered systems
  • Solid-state relays

Datasheet

📄 Open Download

Alternative Parts

Common VB162K alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
CNHTS8541290000
USHTS8541290095
TARIC8541290000
CAHTS8541290000
TypeDetails
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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