ON Semiconductor

ULN2003ADR2G

Bipolar Transistor Arrays

Manufacturer
MPN
ULN2003ADR2G
Package / Case
SOIC-16
Key Attributes
High Voltage, High Current Darlington Transistor Arrays

Technical Specifications

TypeDescription
Output Leakage Current(Icex)50uA
Collector - Emitter Voltage VCEO-
Input Capacitiance(Ci)15pF
number of channelsSeven channels
Input Current(on)0.93mA
Vce Saturation(VCE(sat))1.1V
TypeBJT
TypeDescription
Voltage - Input(Max)30V
Voltage - Forward(Vf)1.5V
Input Current(off)100uA
Current - Collector(Ic)500mA
Operating Temp-20°C ~ +85°C
Package / CaseSOIC-16

Product Introduction

The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps.

The ULx2003A with a 2.7 kΩ series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic.

Features

  • These are Pb-Free Devices

Applications

  • - industrial applications - consumer applications

Datasheet

📄 Open Download

Alternative Parts

Common ULN2003ADR2G alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8542399000
USHTS8542390001
TARIC8542399000
TypeDetails
CAHTS8542390000
BRHTS85423999
INHTS85423900
MXHTS8542.39.99

Sourcing Information

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