Texas Instruments

UCC27611DRVR

Gate Drivers

Manufacturer
MPN
UCC27611DRVR
Product Type
Package / Case
WSON-6
Key Attributes
Low-side GaN driver

Technical Specifications

TypeDescription
Working Voltage V11 V
Input Logic Level - Low900mV~1.3V
Low Level Delay Time14ns
High Level Delay Time14ns
Input Logic Level - High1.85V~2.25V
Driven ConfigurationLow Side
Current - Output Low(IOL)6A
Rise Time9ns
TypeDescription
Fall Time5ns
Current - Output High(IOH)4A
Load TypeMOSFET
Iq A-
Operating Temp-40°C ~ +140°C
FeaturesEnable shutdown
Package / CaseWSON-6

Product Introduction

The UCC27611 is a single-channel, high-speed gate driver optimized for 5V drive and specifically designed to address enhancement-mode GaNFETs. The drive voltage VREF is precisely regulated to 5V by an internal linear regulator. The UCC27611 provides asymmetric rail-to-rail peak current drive capability of 4A source and 6A sink. With a split-output configuration, turn-on and turn-off times can be optimized for the FET. The package and pin assignment with minimum parasitic inductance reduce rise and fall times and limit ringing. In addition, short propagation delays with minimal tolerance and variation enable efficient operation at high frequencies. 1Ω and 0.35Ω resistors improve immunity to hard switching caused by high slew rate dV/dt.

Independence from VDD input signal thresholds ensures TTL and CMOS low-voltage logic compatibility. For safety considerations, internal output pull-up and pull-down resistors hold the output low when the input pin is floating. Internal circuitry on the VREF pin features undervoltage lockout, which keeps the output low until the VREF supply voltage is within the operating range. The UCC27611 is offered in a compact 2.00mm × 2.00mm SON-6 package (DRV) with an exposed thermal pad and ground pad, enhancing package power handling capability. The UCC27611 operates over a wide temperature range of −40°C to 140°C.

Features

  • Enhancement-mode GaN FET (eGaN FET) driver
  • 4V to 18V single-supply voltage range
  • 5V drive voltage VREF
  • 4A peak source and 6A peak sink current drive
  • 1Ω and 0.35Ω pull-up and pull-down resistors (maximizes immunity to high dV/dt)
  • Split output configuration (enables independent turn-on and turn-off optimization per FET)
  • Low propagation delay (14ns typical)
  • TTL and CMOS compatible inputs (supply voltage independent, easily interfaces with digital and analog controllers)
  • Dual-input design for flexible drive (both inverting and non-inverting configurations supported)
  • Output held low when input is floating
  • VDD undervoltage lockout (UVLO)
  • Optimized pin layout compatible with eGaN FETs for easy PCB routing
  • 2.00mm × 2.00mm small outline no-lead (SON)-6 package with exposed thermal pad and ground pad (minimizes parasitic inductance to reduce gate ringing)
  • Operating temperature range: −40°C to 140°C

Applications

  • - Switching power supplies - DC-DC converters - Synchronous rectification - Solar inverters, motor control, UPS - Envelope tracking power supplies

Datasheet

📄 Open Download

Alternative Parts

Common UCC27611DRVR alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8542399000
USHTS8542390001
TARIC8542399000
TypeDetails
CAHTS8542390000
BRHTS85423999
INHTS85423900
MXHTS8542.39.99

Sourcing Information

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