TSP40N30M
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 300 V |
| Continuous Drain Current | 40 A |
| Chan Type | N-Channel |
| Pd W | 150 W |
| Output Capacitance(Coss) | 282pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| Number | 1 N-channel |
| Type | Description |
|---|---|
| Input Capacitance(Ciss) | 2.958nF |
| Vgs | ±30V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 145mOhm@10V |
| Gate Charge C | 60nC@10V |
| Type | N-Channel |
| Package / Case | TO-220 |
Product Introduction
This power MOSFET is manufactured using TrueSemi's advanced planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching power supplies and active power factor correction based on half-bridge topologies.
Features
- 40A, 300V, max R<sub>DS(on)</sub> = 0.145Ω at V<sub>GS</sub> = 10V
- Low gate charge: Q<sub>g</sub> = 60 nC (typical)
- Low reverse transfer capacitance: C<sub>rss</sub> = 31 pF (typical)
- Lower EMI noise
- RoHS-compliant device
- 100% avalanche tested
Datasheet
Alternative Parts
Common TSP40N30M alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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