TLP785(GB-TP6,F
Optocouplers (Isolators)
Technical Specifications
| Type | Description |
|---|---|
| Rise Time | 2us |
| Fall Time | 3us |
| Vce Saturation(VCE(sat)) | 400mV@2.4mA,8mA |
| Load Voltage | 80V |
| Reverse Voltage | 5V |
| Current Transfer Ratio | 600%;50% |
| Voltage - Forward(Vf) | 1.15V |
| Input Type | - |
| Type | Description |
|---|---|
| Output Current | 50 mA |
| Operating Temperature | -55°C~+110°C |
| Channels | 1 |
| Output Type | Phototransistor |
| Isolation Vrms V | 5 V |
| Features | - |
| Package / Case | SMD-4P |
Product Introduction
The TOSHIBA TLP785 consists of a silicone phototransistor optically coupled to a gallium arsenide (GaAs) infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)). TLP785F is a lead forming type for the long creepage surface mounting of TLP785.
Features
- TLP785: 7.62mm pitch type DIP4
- TLP785F: 10.16mm pitch type DIP4
- Collector-emitter voltage: 80V (min)
- Current transfer ratio: 50% (min) Rank GB: 100% (min)
- Isolation voltage: 5000Vrms (min)
- UL approved: UL1577, file No. E67349
- BSI under application: BS EN60065:2002 BS EN60950-1:2006 SEMKO under application:EN60065:2002 EN60950-1:2001, EN60335-1:2002 Option(D4)type VDE approved: DIN EN60747-5-2
Applications
- Office Equipment
- Household Appliances
- Solid State Relays
- Switching Power Supplies
- Various Controllers
- Signal Transmission between Different Voltage Circuits
Datasheet
Alternative Parts
Common TLP785(GB-TP6,F alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Type | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
Sourcing Information
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