Toshiba

TLP785(GB,F

Optocouplers (Isolators)

Manufacturer
MPN
TLP785(GB,F
Package / Case
DIP-4
Key Attributes
Photocoupler GaAs IRED & Photo-Transistor

Technical Specifications

TypeDescription
Rise Time2us@2mA,100Ohm
Fall Time3us
Vce Saturation(VCE(sat))400mV@2.4mA,8mA
Load Voltage80V
Reverse Voltage5V
Current Transfer Ratio600%;100%
Voltage - Forward(Vf)1.15V
Forward Current(If)25mA
Total Power Dissipation(Pd)240mW
TypeDescription
Input TypeDC
Output Current50 mA
Operating Temperature-25°C~+85°C
Channels1
Output TypePhototransistor
Isolation Vrms V5 V
Features-
Package / CaseDIP-4

Product Introduction

The TOSHIBA TLP785 consists of a silicone phototransistor optically coupled to a gallium arsenide (GaAs) infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5 kVRMS (min)). TLP785F is a lead forming type for the long creepage surface mounting of TLP785.

Features

  • TLP785: 7.62 mm pitch type DIP4
  • TLP785F: 0.16 mm pitch type DIP4
  • Collector-emitter voltage: 80 V (min)
  • Current transfer ratio: 50% (min) Rank GB: 100% (min)
  • Isolation voltage: 5000 Vrms (min)
  • UL approved: UL1577, File No.E67349
  • c-UL approved: CSA Component Acceptance Service No. 5A, File No.E67349 Option (D4)
  • VDE approved: DIN EN60747-5-5
  • CQC-approved: GB4943.1, GB8898
  • SEMKO approved: EN60065 EN60950-1, EN62368-1

Applications

  • Office Equipment
  • Household Appliances
  • Solid State Relays
  • Switching Power Supplies
  • Various Controllers
  • Signal Transmission between Different Voltage Circuits

Datasheet

📄 Open Download

Alternative Parts

Common TLP785(GB,F alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541490000
USHTS8541491010
TARIC8541490000
TypeDetails
CAHTS8541490090
BRHTS85414900
INHTS85414900
MXHTS8541.40.02

Sourcing Information

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