Toshiba

TLP291-4(GB-TP,E)

Transistor, Photovoltaic Output Optoisolators

Manufacturer
MPN
TLP291-4(GB-TP,E)
Package / Case
SOP-16-4.4mm
Key Attributes
Photocouplers GaAs Infrared LED & PhotoTransistor

Technical Specifications

TypeDescription
Rise time2us
Fall time3us
Vce Saturation(VCE(sat))400mV@2.4mA,8mA
Load Voltage80V
Reverse Voltage5V
Current transfer ratio400%;50%
Voltage - Forward(Vf)1.2V
Forward Current(If)50mA
Total Power Dissipation(Pd)170mW
TypeDescription
Input typeDC
Output Current0.05 A
Operating Temp-55°C ~ +110°C
Channels4.0
Output TypePhototransistor
Isolation Vrms V2.5 V
Features-
Package / CaseSOP-16-4.4mm

Product Introduction

The TLP291-4 consists of phototransistors optically coupled to gallium arsenide infrared emitting diodes. The TLP291-4 Photocoupler is housed in the very small and thin SO16 package.

Since the TLP291-4 is guaranteed over a wide operating temperature range (Ta = -55 to 110°C), it is suitable for high-density surface mount applications such as programmable controllers.

Features

  • Collector-emitter voltage: 80 V (min)
  • Current transfer ratio: 50% (min) GB Rank: 100% (min)
  • Isolation voltage: 2500 Vrms (min)
  • Operating temperature: -55 to 110°C
  • Safety standards UL-approved UL1577 File No.E67349 cUL-approved CSA Component Acceptance Service No.5A File No.E67349 VDE approved EN60747-5-5 Certificate No. 40009347

Applications

  • - Programmable Logic Controllers (PLCs) - Switching Power Supplies - Simplex/Multiplex Data Transmission

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541490000
USHTS8541491010
TARIC8541490000
TypeDetails
CAHTS8541490090
BRHTS85414900
INHTS85414900
MXHTS8541.40.02

Sourcing Information

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