SZMMBZ33VALT1G
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Reverse Leakage Current (Ir) | 50nA |
| Package / Case | SOT-23 |
Product Introduction
These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Features
- SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
- Standard Zener Breakdown Voltage Range - 5.6 V to 47 V
- Peak Power - 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform ESD Rating: - Class 3B (>16 kV) per the Human Body Model - Class C (>400 V) per the Machine Model
- ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge
- Maximum Clamping Voltage @ Peak Pulse Current
- Low Leakage <5.0 μA
- Flammability Rating UL 94 V - 0
- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free and are RoHS Compliant
Applications
- computers
- printers
- business machines
- communication systems
- medical equipment
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Sourcing Information
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