Hangzhou Silan Microelectronics
SVD640T
Transistors (BJT/MOSFET)
Type: N-Channel
Drain to Source Voltage: 200V
Current - Continuous Drain(Id): 18A
Pd - Power Dissipation: 150W
Gate Threshold Voltage (Vgs(th)): 4V
RDS(on): 150mΩ@10V
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 18 A |
| Chan Type | N-Channel |
| Pd W | 150 W |
| Output Capacitance(Coss) | 160pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.108nF |
| Operating Temperature | -65°C~+150°C |
| Rds On Ohm | 150mOhm@10V |
| Gate Charge C | 41nC@10V |
| Type | N-Channel |
| Package / Case | TO-220 |
Product Introduction
SVD640T/D/S is an N-channel enhancement-mode power MOSFET fabricated using Silicon's proprietary S-Rin™ structured VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes.
These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Features
- 18A, 200V, R<sub>DS(on)</sub> (typ.) = 0.12Ω @ V<sub>GS</sub> = 10V
- Low gate charge
- Low C<sub>rss</sub>
- Fast switching
- Improved dv/dt capability
Applications
- AC-DC power supplies
- DC-DC converters
- H-bridge PWM motor drivers
Datasheet
Alternative Parts
Common SVD640T alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| Type | Details |
|---|---|
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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