SUP90100E-GE3
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 150 A |
| Chan Type | N-Channel |
| Pd W | 375 W |
| Output Capacitance(Coss) | 450pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.93nF |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 12.4mOhm@7.5V |
| Gate Charge C | 110nC@10V |
| Type | N-Channel |
| Package / Case | TO-220AB |
Product Introduction
These are N-channel enhancement-mode silicon-gate power MOSFETs. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are suitable for use in switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These types can be driven directly by ICs.
Features
- TrenchFET power MOSFET
- Maximum 175 °C junction temperature RoHS
- Reduces power loss from passing
- 100 % Rg and UIS tested
Applications
- Switching power supply
- DC/DC converter
- Power tools
- Motor drive switch
- DC/AC inverter
- Battery management
- OR-ing / e-fuse
Datasheet
Alternative Parts
Common SUP90100E-GE3 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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