STW33N60M2
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 600 V |
| Continuous Drain Current | 26 A |
| Chan Type | N-Channel |
| Pd W | 190 W |
| Rds On Ohm | 0.125 Ω |
| Gate Charge C | 45.5 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.781nF |
| Vgs | +/-25V |
| Output Cap Coss | 8.5e-11 |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | TO-247 |
Product Introduction
These devices are N-channel power MOSFETs developed using the new generation MDmesh™ technology — MDmesh II Plus™ low Qg technology. These innovative power MOSFETs combine a vertical structure with the company's strip layout to achieve extremely low on-resistance and gate charge. As a result, they are suitable for the most demanding high-efficiency converters.
Features
- Ultra-low gate charge
- Lower R DS(on) × area compared to previous generation
- MDmesh™ II technology
- Low gate input resistance
- 100% avalanche tested
- Zener protected
Applications
- - Switching applications - LCC converters, resonant converters
Datasheet
Alternative Parts
Common STW33N60M2 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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