STL90N6F7
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 90 A |
| Chan Type | N-Channel |
| Pd W | 94 W |
| Output Capacitance(Coss) | 880pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 5.4mOhm@10V |
| Gate Charge C | 25nC@10V |
| Type | N-Channel |
| Package / Case | PowerFLAT(5x6) |
Product Introduction
This N-channel power MOSFET utilizes StripFET F7 technology with an enhanced trench gate structure, achieving ultra-low on-resistance while reducing internal capacitance and gate charge for faster, more efficient switching operation.
Features
- Among the lowest R<sub>DS(ON)</sub> in the market
- Excellent figure of merit (FoM)
- Low C<sub>rss</sub>/C<sub>iss</sub> ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Datasheet
Alternative Parts
Common STL90N6F7 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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