STL160N10F8
Transistors (BJT/MOSFET)
Type: N-Channel
Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 158A
Pd - Power Dissipation: 167W
Gate Threshold Voltage (Vgs(th)): 4V
RDS(on): 2.4mΩ@10V
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 158 A |
| Chan Type | N-Channel |
| Pd W | 167 W |
| Gate Charge C | 90 nC |
| Output Capacitance(Coss) | 1.23nF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 2.4mOhm@10V |
| Type | N-Channel |
| Package / Case | PowerFLAT-8(5x6) |
Product Introduction
STL160N10F8 is a 100V N-channel enhancement-mode power MOSFET designed with STripFET F8 technology, featuring an enhanced trench gate structure. It delivers an excellent figure of merit for very low on-state resistance while reducing internal capacitance and gate charge, enabling faster and more efficient switching.
Features
- MSL1 rated
- 175℃ maximum operating junction temperature
- 100% avalanche tested
- Low gate charge Qg
Applications
- Server and telecom power supplies
- Industrial battery management systems (BMS)
- Power tools
- Drones
Datasheet
Alternative Parts
Common STL160N10F8 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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