STFW3N170
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 1.7 V |
| Continuous Drain Current | 2.6 A |
| Chan Type | N-Channel |
| Pd W | 63 W |
| Output Capacitance(Coss) | 50pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
| Vgs | ±30V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 13Ohm@10V |
| Gate Charge C | 44nC@10V |
| Type | N-Channel |
| Package / Case | TO-3PF-3 |
Product Introduction
This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Features
- Intrinsic capacitances and Q₉ minimized
- TO-3PF for higher creepage between leads
- High speed switching
- 100% avalanche tested
Applications
- Switching applications
Datasheet
Alternative Parts
Common STFW3N170 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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