STFW3N150
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 1.5 V |
| Continuous Drain Current | 2.5 A |
| Chan Type | N-Channel |
| Pd W | 63 W |
| Output Capacitance(Coss) | 102pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Reverse Transfer Capacitance (Crss@Vds) | 13.2pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 939pF |
| Vgs | ±30V |
| Operating Temperature | -50°C~+150°C |
| Rds On Ohm | 9Ohm@10V |
| Gate Charge C | 29.3nC@10V |
| Type | N-Channel |
| Package / Case | TO-3PF |
Product Introduction
These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Features
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
Applications
- Switching applications
Datasheet
Alternative Parts
Common STFW3N150 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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