STB270N4F3
Transistors (BJT/MOSFET)
Type: N-Channel
Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 160A
Pd - Power Dissipation: 330W
Gate Threshold Voltage (Vgs(th)): 4V
RDS(on): 2mΩ@10V
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 160 A |
| Chan Type | N-Channel |
| Pd W | 330 W |
| Output Capacitance(Coss) | 1.8nF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.4nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 2mOhm@10V |
| Gate Charge C | 150nC@10V |
| Type | N-Channel |
| Package / Case | D2PAK |
Product Introduction
This device is an N-channel power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge, delivering superior switching performance.
Features
- Designed for automotive applications, AEC-Q101 compliant
- 100% avalanche tested
- Standard threshold drive
Applications
- Switching applications
Datasheet
Alternative Parts
Common STB270N4F3 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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