HANGYU MICROELECTRONICS

SS56B

Diodes

Manufacturer
HANGYU MICROELECTRONICSAsian Brands
MPN
SS56B
Product Type
Semiconductors & Discrete
Package / Case
SMB
Datasheet
SS56B Datasheet
Key Attributes
Diode Configuration: 1 Independent
Voltage - DC Reverse (Vr) (Max): 60V
Current - Rectified: 5A
Voltage - Forward(Vf@If): 700mV@5A

Technical Specifications

TypeDescription
Diode Configuration1 Independent
Forward Current5 A
Voltage - DC Reverse (Vr) (Max)60V
Operating Junction Temp-50°C~+150°C
TypeDescription
Forward Voltage700mV@5A
Reverse Leakage Current (Ir)300uA@60V
Surge Current150A
Package / CaseSMB

Features

  • Plastic package meets UL 94V-0 flammability rating
  • Surface mount applications
  • Metal-silicon junction, majority carrier conduction
  • Low power consumption, high efficiency
  • Built-in stress relief structure for automated placement
  • High forward surge current capability
  • Guaranteed high-temperature soldering: 250℃ at terminals for 10 seconds
  • Solderability meets Method 2026
  • Polarity: color band indicates cathode terminal
  • Mounting position: any
  • Weight: 0.003 oz, 0.095 g

Datasheet

📄 Open Download

Alternative Parts

Common SS56B alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
CNHTS8541100000
USHTS8541100040
TARIC8541100000
CAHTS8541100090
TypeDetails
BRHTS85411011
INHTS85411000
MXHTS8541.10.01

Sourcing Information

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