Vishay Intertechnology

SQM40061EL_GE3

Single FETs, MOSFETs

MPN
SQM40061EL_GE3
Package / Case
TO-263
Key Attributes
MOSFET P-CH 40V 100A TO-263(D2PAk)

Technical Specifications

TypeDescription
Drain-Source Voltage40 V
Continuous Drain Current100 A
Rds On Ohm0.005 Ω
Gate Charge C280.0
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)1nF
TypeDescription
Number1 P-Channel
Input Capacitance(Ciss)14.5nF
Operating Temp-55°C ~ +175°C
Pd W-
Package / CaseTO-263

Product Introduction

P-Channel 40V 100A Surface Mount TO-263(D2Pak)

Features

  • TrenchFET power MOSFET
  • Package with low thermal resistance
  • 100 % Rg and UIS tested
  • AEC-Q101 qualified

Applications

  • - Low-side switch for DC/DC converters - Notebooks - Servers - Point-of-Load (POL) - ORing

Datasheet

📄 Open Download

Alternative Parts

Common SQM40061EL_GE3 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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