Siliup

SP010N08GTQ

Transistors (BJT/MOSFET)

Manufacturer
SiliupAsian Brands
MPN
SP010N08GTQ
Package / Case
TO-220-3L
Key Attributes
MOSFET N-CH 100V 65A TO-220-3L

Technical Specifications

TypeDescription
Drain-Source Voltage100 V
Continuous Drain Current65 A
Chan TypeN-Channel
Pd W110 W
Output Capacitance(Coss)339pF
Gate Threshold Voltage (Vgs(th))1.9V
Reverse Transfer Capacitance (Crss@Vds)22pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)1.635nF
Operating Temperature-55°C~+150°C
Rds On Ohm8.5mOhm@10V;11mOhm@4.5V
Gate Charge C14nC@10V
TypeN-Channel
Package / CaseTO-220-3L

Features

  • Fast switching
  • Low gate charge and on-resistance
  • Advanced split-gate trench technology
  • 100% single-pulse avalanche energy tested

Applications

  • Power switch applications
  • Battery management
  • Uninterruptible power supply

Datasheet

📄 Open Download

Alternative Parts

Common SP010N08GTQ alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
CNHTS8541290000
USHTS8541290095
TARIC8541290000
CAHTS8541290000
TypeDetails
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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