Texas Instruments

SN74CB3Q3257DBQR

Interface ICs

Manufacturer
MPN
SN74CB3Q3257DBQR
Package / Case
SSOP-16-4.4mm
Key Attributes
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH

Technical Specifications

TypeDescription
Ron4Ohm
Con10.5pF
Supply Voltage2.3V~3.6V
Channels4
TypeDescription
Operating Temperature-40°C~+85°C
Tpd Ns200 ns
FunctionBidirectional analog channel;Power-off isolation
Package / CaseSSOP-16-4.4mm

Product Introduction

The SN74CB3Q3257 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (rₒₙ). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3257 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3257 is a 4-bit 1-of-2 high-speed FET multiplexer/demultiplexer with a single output-enable (OE̅) input. The select (S) input controls the data path of the multiplexer/demultiplexer. When OE̅ is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Iₒₕ. The Iₒff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE̅ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

Features

  • High-Bandwidth Data Path (up to 500 MHz)
  • 5-V Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (rₒₙ) Characteristics Over Operating Range (rₒₙ = 4 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
  • d- to 5-V Switching With 3.3-V VCC
  • d- to 3.3-V Switching With 3.5 V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cᵢₒ₍ₒₚₚ₎ = 3.5 pF Typ)
  • Fast Switching Frequency (fₒₑ = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (Icc = 0.7 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Iₒff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface, Bus Isolation, Low-Distortion Signal Gating

Applications

  • broadband communications
  • networking
  • data-intensive computing systems

Datasheet

📄 Open Download

Alternative Parts

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Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8542399000
USHTS8542390001
TARIC8542399000
TypeDetails
CAHTS8542390000
BRHTS85423999
INHTS85423900
MXHTS8542.39.99

Sourcing Information

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