Vishay Intertechnology

SIR5802DP-T1-RE3

Single FETs, MOSFETs

Manufacturer
Vishay Intertechnology
MPN
SIR5802DP-T1-RE3
Product Type
Single FETs, MOSFETs
Package / Case
PowerPAK-SO-8
Datasheet
SIR5802DP-T1-RE3 Datasheet
Key Attributes
N-Channel MOSFET, Current: 137.5A, Voltage: 80V

Technical Specifications

TypeDescription
Drain-Source Voltage80 V
Continuous Drain Current137.5 A
Chan TypeN-Channel
Pd W104 W
Rds On Ohm0.004 Ω
Gate Charge C60.0
Gate Threshold Voltage (Vgs(th))4V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)60pF
Number1 N-channel
Input Capacitance(Ciss)3.02nF
Operating Temp-55°C ~ +150°C
TypeN-Channel
Package / CasePowerPAK-SO-8

Product Introduction

80V 137.5A 4V 104W 4mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

Features

  • 5th Generation TrenchFET Power MOSFET
  • Ultra-low RDS × Qg figure of merit
  • Optimized Qgd/Qgs ratio
  • Excellent efficiency in power supply applications
  • 100% Rg and UIS tested

Applications

  • - Synchronous rectification - Primary-side switching - OR-gate and hot-swap switching - Motor drive control - Battery management

Datasheet

📄 Open Download

Alternative Parts

Common SIR5802DP-T1-RE3 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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