SI2301-ZE
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 20 V |
| Continuous Drain Current | 2.3 A |
| Chan Type | P-Channel |
| Pd W | 0.65 W |
| Rds On Ohm | 0.13 Ω |
| Gate Charge C | 2.9 |
| Configuration | Standalone |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 285pF |
| Operating Temp | -55°C ~ +150°C |
| Output Cap Coss | 5.8e-11 |
| Type | P-Channel |
| Package / Case | SOT-23 |
Product Introduction
The SI2301-ZE utilizes advanced trench technology to provide excellent RDS(ON), low gate charge, and the ability to operate at gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
- V DS = -20V, I D = -2.3A
- R DS(ON) < 140mΩ @ V GS = -4.5V
- R DS(ON) < 162mΩ @ V GS = -2.5V
Applications
- - PWM applications - Load switch - SOT-23 - P-channel MOSFET
Datasheet
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Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| Type | Details |
|---|---|
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Need SI2301-ZE from HXY MOSFET for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.
Our Shenzhen sourcing team can help with supplier sourcing, availability checks and quotation comparison for SI2301-ZE, then coordinate procurement, supplier screening, inspection and international shipping based on what you need.
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