Hangzhou Silan Microelectronics
SGT50T65FD1PN
Single IGBTs
Manufacturer
Hangzhou Silan MicroelectronicsAsian Brands
MPN
SGT50T65FD1PN
Product Type
Package / Case
TO-3P-3
Datasheet
Technical Specifications
| Type | Description |
|---|---|
| Pd W | 235 W |
| Operating Temp | -55°C ~ +150°C |
| Trr Ns | 33.0 |
| Gate Charge C | 46.0 |
| Td(Off) | 130ns |
| Td(On) | 45ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 42pF |
| Type | Description |
|---|---|
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V |
| Vce Saturation(VCE(sat)) | 2V@50A,15V |
| Collector Cut-Off Current (Ices) | - |
| Switching Energy(Eoff) | 3.8mJ |
| Turn-On Energy (Eon) | 1mJ |
| Input Capacitance(Cies) | 4.5nF |
| Output Capacitance(Coes) | 100pF |
| Package / Case | TO-3P-3 |
Product Introduction
235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| Type | Details |
|---|---|
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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