SBC846BDW1T1G
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Current - Collector Cutoff | 5uA |
| DC Current Gain | 150 |
| Collector - Emitter Voltage VCEO | 65V |
| Emitter-Base Voltage VEBO | 6V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 250mV |
| Type | Description |
|---|---|
| Type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 100mA |
| Pd W | 0.38 W |
| Operating Temperature | -55°C~+150°C |
| Package / Case | SOT-363 |
Product Introduction
These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.
Features
- S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Datasheet
Alternative Parts
Common SBC846BDW1T1G alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Sourcing Information
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