Rayson

RS2G32LV4D4BDT-53BT

Memory

Manufacturer
RaysonAsian Brands
MPN
RS2G32LV4D4BDT-53BT
Product Type
Maximum Clock Speed
1.866 GHz
Package / Case
TFBGA-200
Key Attributes
Automotive LPDDR4/LPDDR4x SDRAM

Technical Specifications

TypeDescription
Maximum Clock Speed1.866 GHz
Refresh Current900uA
Memory Size64Gbit
Memory FormatLPDDR4X SDRAM
TypeDescription
Operating Temp-25°C ~ +85°C
FeaturesBuilt-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function;Asynchronous reset function;Data mask function
Working Voltage V0.61 V
Package / CaseTFBGA-200

Product Introduction

64Gbit 1.866GHz LPDDR4X SDRAM TFBGA-200(10x14.5) Memory RoHS

Features

  • Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70 - 1.95V; 1.80V nominal – VDD2 = 1.06–1.17V; 1.10V nominal – VDDQ = 1.06–1.17V; 1.10V nominal or low VDDQ = 0.57–0.65V; 0.60V nominal
  • Frequency range – 1866–10 MHz (data rate range: 3733–20 Mb/s per pin)
  • 16n prefetch DDR architecture
  • 8 internal banks per channel for concurrent operation
  • Single-data-rate CMD/ADR entry
  • Bidirectional/differential data strobe per byte lane
  • Programmable READ and WRITE latencies (RL/WL)
  • Programmable and on-the-fly burst lengths (BL = 16, 32)
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling
  • Up to 8.5 GB/s per die
  • On-chip temperature sensor to control self refresh rate
  • Partial-array self refresh (PASR)
  • Selectable output drive strength (DS)
  • Clock-stop capability
  • RoHS-compliant, “green” packaging
  • Programmable VSS (ODT) termination
  • Single-ended CK and DQS support
  • Improved ·RFCab/ᵗRFCpb = 280ns/140ns
  • AEC-Q100

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCN-
CNHTS8542329000
USHTS8542320071
TARIC8542329000
TypeDetails
CAHTS8542330000
BRHTS85423299
INHTS85423200
MXHTS8542.32.99

Sourcing Information

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