PUMH13,115
Bipolar Transistor Arrays
Technical Specifications
| Type | Description |
|---|---|
| Current - Collector Cutoff | 100nA |
| Transition frequency(fT) | 230MHz |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 100mV |
| Input Resistor | 4.7kOhm |
| Resistor Ratio | 12 |
| Voltage - Input(Max)(VI(off)) | 500mV |
| Type | Description |
|---|---|
| Input Voltage (VI(on)@Ic,Vce) | 1.3V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Type | NPN |
| Number | 2 NPN (Pre-Biased) |
| Operating Temp | -65°C ~ +150°C |
| Pd W | 0.3 W |
| Package / Case | SOT-363 |
Product Introduction
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
Features
- Output current capability up to 100 mA
- Integrated bias resistors
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- AEC-Q101 qualified
Applications
- - Low current peripheral driver - Control of IC inputs - Replaces general-purpose transistors in digital applications
Datasheet
Alternative Parts
Common PUMH13,115 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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