PUMH10,115
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Current - Collector Cutoff | 100nA |
| Transition frequency(fT) | 230MHz |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 100mV |
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.86kOhm |
| Resistor Ratio | 21 |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Type | Description |
|---|---|
| Input Voltage (VI(on)@Ic,Vce) | 1.1V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Type | NPN |
| Number | 2 NPN (Pre-Biased) |
| Operating Temperature | -65°C~+150°C |
| Pd W | 0.3 W |
| Package / Case | TSSOP-6(SOT-363) |
Product Introduction
NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface Mounted Device (SMD) plastic package.
NPN/PNP complement: PUMD10
PNP/PNP complement: PUMB10
Features
- 100 mA output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces component count
- Reduces pick and place costs
Applications
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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