Nexperia

PSMN1R0-30YLC,115

Single FETs, MOSFETs

Manufacturer
MPN
PSMN1R0-30YLC,115
Package / Case
LFPAK56
Key Attributes
MOSFET N-CH 30V 100A LFPAK56(PowerSO-8)

Technical Specifications

TypeDescription
Drain-Source Voltage30 V
Continuous Drain Current100 A
Pd W272 W
Rds On Ohm0.001 Ω
Gate Charge C103.5
TypeDescription
Gate Threshold Voltage (Vgs(th))1.95V
Number1 N-channel
Input Capacitance(Ciss)6.645nF
Operating Temp-55°C ~ +175°C
Package / CaseLFPAK56

Product Introduction

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features

  • High reliability Power SO8 package, qualified to 175°C
  • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
  • Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
  • Ultra low Rdson and low parasitic inductance

Applications

  • - DC-to-DC converters - Lithium-ion battery protection - Load switching - Power OR-ing - Server power supplies - Sync rectifier

Datasheet

📄 Open Download

Alternative Parts

Common PSMN1R0-30YLC,115 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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