Nexperia

PMZ130UNEYL

Single FETs, MOSFETs

Manufacturer
MPN
PMZ130UNEYL
Package / Case
SOT-883
Key Attributes
MOSFET N-CH 20V 1.8A SOT-883

Technical Specifications

TypeDescription
Drain-Source Voltage20 V
Continuous Drain Current1.8 A
Chan TypeN-Channel
Pd W0.35 W
Rds On Ohm0.15 Ω
Gate Charge C1.6
Configuration-
Gate Threshold Voltage (Vgs(th))950mV
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)16pF
Number1 N-channel
Input Capacitance(Ciss)93pF
Vgs+/-8V
Output Cap Coss1.8e-11
Operating Temp-55°C ~ +150°C
TypeN-Channel
Package / CaseSOT-883

Product Introduction

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Very fast switching
  • Low threshold voltage
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection: 2 kV HBM
  • Leadless ultra small package: 1.0×0.6×0.48 mm

Applications

  • - Relay driver - High-speed line driver - Low-side loadswitch - Switching circuits

Datasheet

📄 Open Download

Alternative Parts

Common PMZ130UNEYL alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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