PMV65XPEAR
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 20 V |
| Continuous Drain Current | 2.8 A |
| Chan Type | P-Channel |
| Pd W | 0.89 W |
| Rds On Ohm | 0.078 Ω |
| Gate Charge C | 9.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 1.25V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 58pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 618pF |
| Vgs | +/-12V |
| Output Cap Coss | 8e-11 |
| Operating Temp | -55°C ~ +150°C |
| Type | P-Channel |
| Package / Case | SOT-23 |
Product Introduction
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Trench MOSFET technology
- Very fast switching
- Enhanced power dissipation capability: Ptot = 890 mW
- ElectroStatic Discharge (ESD) protection 2 kV HBM
- AEC-Q101 qualified
Applications
- - Relay driver - High speed line driver - High-side loadswitch - Switching circuits
Datasheet
Alternative Parts
Common PMV65XPEAR alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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