PMV55ENEAR
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 3.1 A |
| Chan Type | N-Channel |
| Pd W | 1.19 W |
| Rds On Ohm | 0.06 Ω |
| Gate Charge C | 19.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 646pF |
| Vgs | +/-20V |
| Output Cap Coss | 4.9e-11 |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | SOT-23 |
Product Introduction
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Logic level compatible
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- AEC-Q101 qualified
Applications
- - Relay driver - High-speed line driver - Low-side loadswitch - Switching circuits
Datasheet
Alternative Parts
Common PMV55ENEAR alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Need PMV55ENEAR from Nexperia for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.
Our Shenzhen sourcing team can help with supplier sourcing, availability checks and quotation comparison for PMV55ENEAR, then coordinate procurement, supplier screening, inspection and international shipping based on what you need.
Looking to source PMV55ENEAR? Submit an RFQ and let our Shenzhen sourcing team check available supplier options for you.