PMV16XNR
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 20 V |
| Continuous Drain Current | 8.6 A |
| Chan Type | N-Channel |
| Pd W | 1.2 W |
| Output Capacitance(Coss) | 145pF |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.24nF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 20mOhm@4.5V |
| Gate Charge C | 20.2nC@4.5V |
| Type | N-Channel |
| Package / Case | SOT-23 |
Product Introduction
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Trench MOSFET technology
- Low threshold voltage
- Very fast switching
- Enhanced power dissipation capability of 1200 mW
Applications
- LED driver
- Power management
- Low-side load switch
- Switching circuits
Datasheet
Alternative Parts
Common PMV16XNR alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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