Nexperia

PMPB15XPAX

Single FETs, MOSFETs

Manufacturer
MPN
PMPB15XPAX
Package / Case
DFN2020-6
Key Attributes
MOSFET P-CH 12V 8.2A DFN2020-6

Technical Specifications

TypeDescription
Drain-Source Voltage12 V
Continuous Drain Current8.2 A
Chan TypeP-Channel
Pd W7.1 W
Rds On Ohm0.02 Ω
Gate Charge C100.0
Configuration-
Gate Threshold Voltage (Vgs(th))1V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)530pF
Number1 P-Channel
Input Capacitance(Ciss)2.875nF
Vgs+/-12V
Output Cap Coss5.7e-10
Operating Temp-55°C ~ +150°C
TypeP-Channel
Package / CaseDFN2020-6

Product Introduction

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Low threshold voltage
  • Trench MOSFET technology
  • Side wettable flanks for optical solder inspection
  • Small and leadless ultra thin SMD plastic package: 2×2×0.65 mm
  • AEC-Q101 qualified

Applications

  • - Relay driver - High-speed line driver - High-side load switch - Switching circuits

Datasheet

📄 Open Download

Alternative Parts

Common PMPB15XPAX alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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