Nexperia

PMN40XPEAX

Single FETs, MOSFETs

Manufacturer
MPN
PMN40XPEAX
Package / Case
TSOP-6
Key Attributes
MOSFET P-CH 20V 4.7A TSOP-6

Technical Specifications

TypeDescription
Drain-Source Voltage20 V
Continuous Drain Current4.7 A
Pd W4.08 W
Rds On Ohm0.046 Ω
Gate Charge C16.0
TypeDescription
Gate Threshold Voltage (Vgs(th))1.3V
Number1 P-Channel
Input Capacitance(Ciss)1.025nF
Operating Temp-55°C ~ +175°C
Package / CaseTSOP-6

Product Introduction

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Low threshold voltage
  • Extended temperature range Tj = 175 °C
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 1000 V HBM (class H1C)
  • AEC-Q101 qualified

Applications

  • - Relay driver - High-speed line driver - High-side load switch - Switching circuits

Datasheet

📄 Open Download

Alternative Parts

Common PMN40XPEAX alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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