PMN30UNEX
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 20 V |
| Continuous Drain Current | 6 A |
| Pd W | 1.24 W |
| Rds On Ohm | 0.036 Ω |
| Gate Charge C | 9.0 |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 558pF |
| Operating Temp | -55°C ~ +150°C |
| Package / Case | SOT-457 |
Product Introduction
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Trench MOSFET technology
- Low threshold voltage
- Very fast switching
- Enhanced power dissipation capability of 1240 mW
- ElectroStatic Discharge (ESD) protection > 1 kV HBM
Applications
- - LED driver - Power management - Low-side loadswitch - Switching circuits
Datasheet
Alternative Parts
Common PMN30UNEX alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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