PMDXB600UNEZ
FET, MOSFET Arrays
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 20 V |
| Continuous Drain Current | 0.6 A |
| Chan Type | N-Channel |
| Pd W | 0.265 W |
| Rds On Ohm | 0.47 Ω |
| Gate Charge C | 700.0 |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Configuration | - |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 21.3pF |
| Vgs | +/-8V |
| Operating Temp | -55°C ~ +150°C |
| Output Cap Coss | 5.4000000000000004e-12 |
| Type | N-Channel |
| Package / Case | DFN1010-6 |
Product Introduction
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Trench MOSFET technology
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- Exposed drain pad for excellent thermal conduction
- ElectroStatic Discharge (ESD) protection >1 kV HBM
- Drain-source on-state resistance RDSOn = 470 mΩ
Applications
- - Relay driver - High-speed line driver - Low-side load switch Switching circuits
Datasheet
Alternative Parts
Common PMDXB600UNEZ alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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