Nexperia

PDTC144ET-QR

Single, Pre-Biased Bipolar Transistors

Manufacturer
MPN
PDTC144ET-QR
Package / Case
SOT-23

Technical Specifications

TypeDescription
Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))150mV
Current - Collector(Ic)100mA
Resistor Ratio1
TypeDescription
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@2mA,0.3V
Operating temperature-65°C ~ +150°C
Number1 NPN (Pre-Biased)
TypeNPN
Pd W0.25 W
Package / CaseSOT-23

Product Introduction

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTA144ET

Features

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • - Digital application in automotive and industrial segments - Cost-saving alternative for BC847-Q series in digital applications - Controlling IC inputs - Switching loads

Datasheet

📄 Open Download

Alternative Parts

Common PDTC144ET-QR alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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