Nexperia

PDTB123ET,215

Single, Pre-Biased Bipolar Transistors

Manufacturer
MPN
PDTB123ET,215
Package / Case
SOT-23
Key Attributes
TRANS PREBIAS 50V SOT-23

Technical Specifications

TypeDescription
Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO10V
DC Current Gain40
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)500mA
Output Voltage(VO(on))-
Input Resistor2.86kOhm
TypeDescription
Resistor Ratio1.1
Voltage - Input(Max)(VI(off))600mV
Input Voltage (VI(on)@Ic,Vce)2V
Operating temperature-65°C ~ +150°C
TypePNP
Number1 PNP Pre-Biased
Pd W0.25 W
Package / CaseSOT-23

Product Introduction

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Features

  • Reduces pick and place costs
  • ±10 % resistor ratio tolerance
  • AEC-Q101 qualified

Applications

  • - Digital applications in automotive and industrial sectors - IC input control - Low-cost alternative to BC807 series in digital applications - Switching loads

Datasheet

📄 Open Download

Alternative Parts

Common PDTB123ET,215 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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